Title of article :
Field emission investigations of RuO2-doped SnO2 wires
Author/Authors :
Ashok B. Bhise، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 104 A/cm2 is drawn
from the single wire emitter at an applied field of 8.46 104 V/mm. Nonlinearity in the Fowler–Nordheim (F–N) plot has been observed and
explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at
the preset value of 1.5 mA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the
RuO2:SnO2 wires offer advantages as field emitters for many potential applications.
Keywords :
Field enhancement factor , doped semiconductor , Field emission , RuO2 , SnO2
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science