Title of article :
Field emission investigations of RuO2-doped SnO2 wires
Author/Authors :
Ashok B. Bhise، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
5
From page :
9159
To page :
9163
Abstract :
Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 104 A/cm2 is drawn from the single wire emitter at an applied field of 8.46 104 V/mm. Nonlinearity in the Fowler–Nordheim (F–N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 mA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications.
Keywords :
Field enhancement factor , doped semiconductor , Field emission , RuO2 , SnO2
Journal title :
Applied Surface Science
Serial Year :
2007
Journal title :
Applied Surface Science
Record number :
1004315
Link To Document :
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