Regularly spaced conducting or magnetic stripe formation in nano ripples

Conducting–insulating and magnetic–nonmagnetic segments are produced using pre-fabricated ion induced nano ripples. Ripple structures of Si are formed by oblique angle keV energy oxygen or argon ion bombardment. Further oxygen ion implantation leads to insulating–semiconducting zone formation whereas Fe ion implantation helps to produce nonmagnetic–magnetic stripes. Conducting Atomic Force Microscopy, Magnetic Force Microscopy and Energy dispersive X-ray spectroscopy shows the coexistence of semiconducting–insulating and magnetic–nonmagnetic zones. Grazing angle keV ion bombardment fabricates parallel metal ripples from polycrystalline thin films. C-AFM measurements show that the crests of the ripples are regularly spaced unidirectional conducting wires.