Title of article :
Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films
Author/Authors :
Usman Ilyas، نويسنده , , R.S. Rawat، نويسنده , , Y. Wang، نويسنده , , T.L. Tan، نويسنده , , P. Lee، نويسنده , , R. Chen، نويسنده , , H.D. Sun، نويسنده , , Fengji Li، نويسنده , , Sam Zhang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
6
From page :
6373
To page :
6378
Abstract :
The un-doped and Mn doped ZnO thin films, with oxygen rich stoichiometry, were deposited onto Si (1 0 0) substrate using spin coating technique. The structural analysis revealed the hexagonal wurtzite structure without any impurity phase formation. A consistent increase in cell volume with the increase in Mn doping concentration confirmed the successful incorporation of bigger sized tetrahedral Mn2+ ions (0.83 Å) in ZnO host matrix that was also endorsed by the presence of Mn 2p3/2 core level XPS spectroscopic peak. Extended deep level emission (DLE) spectra centered at ∼627 nm confirmed the presence of oxygen interstitials. Moreover, the magnetic measurements of field dependent M–H curves revealed the origin of ferromagnetic ordering from Mn-defect pair exchange coupling with oxygen interstitials in ZnO host matrix.
Keywords :
Room temperature ferromagnetism (RTFM) , ZnO:Mn thin films , Spin coating technique , Dilute magnetic semiconductors (DMS) , Oxygen interstitials
Journal title :
Applied Surface Science
Serial Year :
2012
Journal title :
Applied Surface Science
Record number :
1005094
Link To Document :
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