• Title of article

    First-principles study on the electronic structure and optical properties for SnO2 with oxygen vacancy

  • Author/Authors

    Donglin Guo، نويسنده , , Chenguo Hu، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    6
  • From page
    6987
  • To page
    6992
  • Abstract
    The electronic structure and optical properties of SnO2 with consideration of oxygen vacancy are computed using the first-principles plane-wave pseudopotential method based on the density functional theory. The results show that SnO2 with oxygen vacancy has a band gap of 1.03 eV, and the Fermi level shift upward to the conduction band, showing a typical n-type character; besides oxygen vacancy would introduce a new electronic state within the band gap compared with that of pure SnO2. Moreover, certain impurity levels are located near the top of the valence band, which narrows the band gap of the compound. Optical properties, including the dielectric function, reflectivity, absorption coefficient and the energy-loss spectrum are calculated and the results are in good agreement with the experiments. The calculated absorption coefficient shows that SnO2 with oxygen vacancy exhibits an absorption band in the visible region, centered at 2.10 eV (588 nm). It is demonstrated that oxygen vacancy causes the visible light absorption band.
  • Keywords
    Oxygen vacancy , SnO2 crystal , Electronic structure , Optical properties
  • Journal title
    Applied Surface Science
  • Serial Year
    2012
  • Journal title
    Applied Surface Science
  • Record number

    1005185