Title of article :
Analysis of the surface state of epi-ready Ge wafers
Author/Authors :
M. Gab?s، نويسنده , , S. Palanco، نويسنده , , S. Bijani، نويسنده , , E. Barrig?n، نويسنده , , C. Algora، نويسنده , , I. Rey-Stolle، نويسنده , , I. Garc?a، نويسنده , , J.R. Ramos-Barrado، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
5
From page :
8166
To page :
8170
Abstract :
The surface state of Ge epi-ready wafers (such as those used on III–V multijunction solar cells) supplied by two different vendors has been studied using X-ray photoemission spectroscopy. Our experimental results show that the oxide layer on the wafer surface is formed by GeO and GeO2. This oxide layer thickness differs among wafers coming from different suppliers. Besides, several contaminants appear on the wafer surfaces, carbon and probably chlorine being common to every wafer, irrespective of its origin. Wafers from one of the vendors show the presence of carbonates at their surfaces. On such wafers, traces of potassium seem to be present too.
Keywords :
Photoelectron spectroscopy , Germanium wafers , III–V solar cells
Journal title :
Applied Surface Science
Serial Year :
2012
Journal title :
Applied Surface Science
Record number :
1005371
Link To Document :
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