High-speed epitaxial growth of BaTi2O5 thick films and their in-plane orientations

Epitaxial BaTi2O5 (BT2) thick films were prepared on (1 0 0), (1 1 0) and (1 1 1) MgO single-crystal substrates by laser chemical vapor deposition. (0 1 0)- and (1 1 2)-oriented BT2 thick films grew epitaxially on (1 0 0) and (1 1 0) MgO substrates at deposition temperatures of 1326–1387 K and 1324–1383 K, respectively. On the (1 1 1) MgO substrate, BT2 thick film showed image and image co-orientations at 1337–1353 K. Epitaxial BT2 thick films had a columnar structure in cross-section and the deposition rate reached 42 μm h−1. The typical in-plane orientations of the epitaxial BT2 films were BT2 [image]//MgO [image] for BT2 (0 1 0)//MgO (1 0 0), BT2 [image]//MgO [0 0 1] for BT2 (1 1 2)//MgO (1 1 0), BT2 [1 0 1]//MgO [image] for (image) BT2//MgO (1 1 1), and BT2 [3 0 1]//MgO [image] for (image) BT2//MgO (1 1 1).