The effects of ZnO layer and annealing temperature on the structure, optical and film–substrate cohesion properties of SiGe thin films prepared by radio frequency magnetron sputtering

ZnO/SiGe thin films were prepared by radio frequency magnetron sputtering. The effects of the ZnO layer and the annealing temperature on the structure, optical absorption and film–substrate cohesion properties of the films were investigated by XRD, SEM, UV–vis and coating adhesion automatic scratch tester. The results indicated that the additional ZnO layer and the annealing behavior could effectively improve the crystallinity of the SiGe films, and enhance the optical absorption intensity or range of the films. The film–substrate cohesion property test showed that critical loading Lc values of the ZnO/SiGe films were almost in accordance with those of the SiGe films when annealing temperature Tan is increased to 700 and 800 °C.