Title of article
Optimization of sputtering parameters for Smsingle bondCo thin films using design of experiments
Author/Authors
G. Venkata Ramana، نويسنده , , P. Saravanan، نويسنده , , S.V. Kamat، نويسنده , , Y. Aparna*، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
8
From page
110
To page
117
Abstract
A design of experiments (DOE) study on the optimization of DC magnetron sputtering parameters for Smsingle bondCo films was carried out using a Taguchi-fractional factorial, L8 (24−1) design methodology. Four important sputtering parameters, viz., sputtering pressure, DC power, substratesingle bondtarget distance and sputtering time were considered in their upper, standard and lower levels of their predefined range in order to investigate the range of processing conditions and their effect on the film quality. The attributes of Smsingle bondCo thin films were quantified with respect to surface roughness, thickness, crystallite size, phase composition and coercivity. The significance of each process parameter as well as the optimal combination of sputtering parameters to achieve the desired film characteristics such as finer crystallite size, low surface roughness and high coercivity was obtained using statistical analysis of the experimental results by the analysis of variance (ANOVA) method.
Keywords
Design of Experiments , Sputtering , Smsingle bondCo films
Journal title
Applied Surface Science
Serial Year
2012
Journal title
Applied Surface Science
Record number
1005880
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