Author/Authors :
S. Lugo، نويسنده , , Y. Pe?a، نويسنده , , M. Calixto-Rodriguez، نويسنده , , C. L?pez-Mata، نويسنده , , M.L. Ram?n، نويسنده , , I. G?mez، نويسنده , , A. Acosta، نويسنده ,
Abstract :
AgInS2 thin films were obtained by the annealing of chemical bath deposited In2S3–Ag2S layers at 400 °C in N2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS2 has been obtained. These films have an optical band gap, Eg, of 1.86 eV and an electrical conductivity value of 1.2 × 10−3 (Ω cm)−1.
