Investigation of structural, optical and electronic properties in Al–Sn co-doped ZnO thin films

Al–Sn co-doped ZnO (ATZO) nanocrystals were successfully synthesized onto glass substrates by the sol–gel processing. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that co-doped ZnO films showed a preferred orientation toward the c-axis and the full width at half maximum (FWHM) of the (0 0 2) plane increased first and then decreased, reaching a minimum of about 0.213 with Sn concentration of 2%. The effects of various Sn concentrations on electrical and optical properties were also investigated by 4-point probe device and ultraviolet–visible (UV–vis) spectroscopy, respectively. The X-ray photoelectron spectroscopy (XPS) study showed Snsingle bondO and Alsingle bondO bonding in the synthesized co-doped ZnO thin films, which confirmed the substitution of Zn2+ by Sn and Al ions. Room temperature photoluminescence (PL) was observed for pure and co-doped ZnO thin films and the origin of these emissions was discussed.