Near surface layer evolution in Zn+ ions implanted Si upon annealing treatments

The damaged layer in Zn implanted n-type CZ-Si(1 0 0) substrates was investigated by a secondary ion mass-spectrometry (SIMS), an X-ray diffraction (XRD) and an atomic force microscopy (AFM). The substrates were implanted with 64Zn+ ions at an energy of 100 keV and an ion dose of 2 × 1016 cm−2 with subsequent annealing at 400, 600, 700, 800, 900 and 1000 °C for 60 min in neutral/inert and oxygen atmosphere. A significant redistribution of Zn atoms in the damaged layer caused by the thermal annealing was found by SIMS. Zn concentration maximum exceeds a Zn solubility limit in Si; therefore, a decomposition of Zn solid solution in Si resulting in formation of zinc-containing phases in the surface layer should be expected. In an as-implanted state, the amorphous layer with thickness about 100 nm, which located inside of a substrate on the depth more than value Rp, is formed. After thermal annealing at 800 °C nanoparticles on the sample surface were revealed. After 1000 °C annealing the radiation-induced defects completely disappeared, and Zn implanted atoms are revealed in the near surface layer.