Title of article :
Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD (+IBAD) methods. Part 1: Effective relative permittivity
Author/Authors :
M?ria Hartmanov?، نويسنده , , Vojtech N?da?dy، نويسنده , , Franti?ek Kundracik، نويسنده , , Catina Mansilla، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
7
From page :
65
To page :
71
Abstract :
Study is devoted to the effective relative permittivity ɛr of CeO2 + x. Sm2O3 thin films prepared by electron-beam physical vapour deposition and ionic beam-assisted deposition methods; ɛr was investigated by three independent ways from the bulk parallel capacitance Cp, impedance capacitance Cimp, and accumulation capacitance Cacc in dependence on the deposition conditions (deposition temperature, dopant amount x and Ar+ ion bombardment during the film deposition) used. Investigations were performed using impedance spectroscopy, capacitance–voltage and current–voltage characteristics as well as deep level transient spectroscopy. Results obtained are described and discussed.
Keywords :
Electron beam-physical vapour deposition , Ionic beam assisted deposition , Sm2O3 thin films , Impedance spectroscopy , Relative permittivity , CeO2 + x , Deep level transient spectroscopy
Journal title :
Applied Surface Science
Serial Year :
2013
Journal title :
Applied Surface Science
Record number :
1006689
Link To Document :
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