Author/Authors :
Dusan Pudis، نويسنده , , Lubos Suslik، نويسنده , , Jaroslava Skriniarova، نويسنده , , Jaroslav Kovac، نويسنده , , Jaroslav Kovac Jr.، نويسنده , , Ivana Kubicova، نويسنده , , Ivan Martincek، نويسنده , , Stefan Hascik، نويسنده , , Lutz Hecht and Peter Schaaf ، نويسنده ,
Abstract :
In this paper, effect of two-dimensional photonic crystal surface pattern on the emission properties of the GaAs/AlGaAs based light emitting diode (LED) is demonstrated. For surface patterning of the LED, the interference lithography based on a double-exposure process by two-beam interference optical field was used. Prepared photonic crystal structure in the LED surfaces was analyzed by atomic force microscope and scanning electron microscope. Emitting properties of the LEDs were investigated by L(I) measurements. Effect of large and short period of two-dimensional photonic structure on light extraction efficiency was documented.
Keywords :
Light emitting diode , Optoelectronic device , Photonic crystal structure , Interference lithography
