Author/Authors :
?ubica Stuchl?kov?، نويسنده , , Ladislav Harmatha، نويسنده , , Miroslav Petrus، نويسنده , , Jakub Ryb?r، نويسنده , , J?n ?ebok، نويسنده , , Beata ?ciana، نويسنده , , Damian Radziewicz، نويسنده , , Damian Pucicki، نويسنده , , Marek T?acza?a، نويسنده , , Arp?d K?sa، نويسنده , , Peter Benko، نويسنده , , Jaroslav Kov??، نويسنده , , Peter Juhasz، نويسنده ,
Abstract :
This paper highlights the electrical characterization of three types of the multiple quantum well (MQW) InGaAsN/GaAs heterostructures labelled NI58n, NI59n and NI66n with the nitrogen concentration of about 0.4% and indium content of 12.1%, 13.5% and 13.0%, respectively, using capacitance methods. These MQW InGaAsN/GaAs heterostructures were grown by atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) at various growth conditions. The capacitance-voltage and DLTS measurements of these structures were performed utilizing the measurement system BIORAD DL8000.
Keywords :
Schottky diodes , Dilute nitrides , Deep Level Transient Fourier Spectroscopy , MQW InGaAsN/GaAs , Capacitance voltage measurements , Deep energy levels
