Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique

Mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with significantly reduced bandgaps were synthesized by using zinc oxide and gallium nitride target at 100 °C followed by post-deposition annealing at 500 °C in ammonia for 4 h. All the films were synthesized by RF magnetron sputtering on Fluorine-doped tin oxide-coated glass. We found that mixed zinc oxide and gallium nitride (ZnO:GaN) thin films exhibited significantly reduced bandgap, as a result showed improved PEC response, compared to ZnO thin film. Furthermore, mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with various bandgaps were realized by varying the O2 mass flow rate in mixed O2 and N2 chamber ambient.