Title of article
Capacitive humidity-sensing properties of Zn2SiO4 film grown on silicon nanoporous pillar array
Author/Authors
Wen Chuang Wang، نويسنده , , Yong Tao Tian، نويسنده , , Kun Li، نويسنده , , Er Yang Lu، نويسنده , , Dong Shang Gong، نويسنده , , Xin Jian Li، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
5
From page
372
To page
376
Abstract
A Zn2SiO4 thin film was grown on silicon nanoporous pillar array (Si-NPA) via a chemical vapor deposition method, and the capacitive humidity-sensing properties of Zn2SiO4/Si-NPA were investigated at room temperature. With the relative humidity (RH) changing from 11% to 95%, the capacitance of the sensor increased from 1.67 to 135.97 nF at the testing frequency of 20 Hz, and an overall increment of 8042% was obtained. The response and recovery time was measured to be 48 and 32 s, respectively. The sensor showed a maximum humidity hysteresis of 1.99% at 75% RH. These results indicated that Zn2SiO4/Si-NPA might be a promising material for fabricating high-performance capacitive humidity sensors.
Keywords
Capacitive humidity sensor , Silicon nanoporous pillar array (Si-NPA) , Zn2SiO4/Si-NPA , Chemical vapor deposition
Journal title
Applied Surface Science
Serial Year
2013
Journal title
Applied Surface Science
Record number
1006974
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