• Title of article

    Tailoring radiation damage in ZnO by surface modification

  • Author/Authors

    M.T. Myers، نويسنده , , S. Charnvanichborikarn، نويسنده , , M.A. Myers، نويسنده , , J.H. Lee، نويسنده , , H. Wang، نويسنده , , M.M. Biener، نويسنده , , L. Shao، نويسنده , , S.O. Kucheyev، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2013
  • Pages
    4
  • From page
    129
  • To page
    132
  • Abstract
    Heavy-ion irradiation of (0 0 0 1) ZnO crystals results in unusual damage buildup, including an additional (intermediate) peak in damage-depth profiles measured by ion channeling, the formation of near-surface nanocavities, and stoichiometric imbalance. All these effects are thought to be associated with the influence of the sample surface on dynamic annealing processes. Here, by using ion channeling and transmission electron microscopy, we find that placing an ~7 nm thick AlO(OH) layer on the (0 0 0 1) ZnO surface results in (i) suppression of cavity formation, (ii) a reduced intermediate defect peak intensity, and (iii) a decreased level of disorder extending up to ~100 nm from the ZnO surface for room-temperature bombardment with 500 keV Xe ions. Our results demonstrate the potential to control radiation damage in ZnO by surface manipulation.
  • Keywords
    Semiconductor , Implantation , Interface defects
  • Journal title
    Applied Surface Science
  • Serial Year
    2013
  • Journal title
    Applied Surface Science
  • Record number

    1007179