Title of article :
Structural and electrical studies on nanostructured InSe thin films
Author/Authors :
K.F. Abd El-Rahman and A.A.A. Darwish، نويسنده , , M.M. El-Nahass، نويسنده , , M.H. Bahlol، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Abstract :
InSe powder was found to be polycrystalline with hexagonal system. X-ray diffraction and scanning electron microscopy results confirmed that the InSe films have nanostructure nature. The heat treatment enhance the crystallite size. The dark electrical conductivity of InSe films showed that the dominant conduction is through the extended states in the temperature range 293–473 K. Thermoelectric properties show a negative sign exhibiting n-type semiconductig nature of films. Current density–voltage characteristics of InSe films showed Ohmic conduction in the lower voltage range, and space charge limited conductivity (SCLC) in the relatively high-voltage range. The SCLC was controlled by an exponential distribution of traps below the conduction band. The temperature dependence of the current density allowed the calculation of some essential parameters.
Keywords :
Evaporation , InSe thin films , SCLC
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science