Stoichiometry behavior of TaN, TaCN and TaC thin films produced by magnetron sputtering

Thin films were synthesized in a magnetron sputtering system using a target of Ta with 99.99% purity and silicon substrates (1 1 1). The gases used for the film growth were (Ar + N2), (Ar + CH4 + N2) and (Ar + CH4) mixtures for TaN, TaCN and TaC, respectively. The substrate temperature increased from room temperature to 500 °C. The chemical composition and bonding configuration were examined using X-ray photoelectron spectroscopy (XPS), revealing Tasingle bondN, Tasingle bondCsingle bondN, Tasingle bondC and Csingle bondC bonds. Moreover, the crystallographic structure was analyzed using X-ray diffraction (XRD), indicating the presence of (1 1 1) and (2 0 0) planes belonging to a face-centered cubic structure. The stoichiometry variation dependence on the CH4 and N2 flow was analyzed, and the influence of the substrate temperature on the coatings was investigated. Finally, scanning electron microscopy (SEM) was used to determine the evolution on the grain formation in the coatings as the substrate temperature increased.