Enhanced infrared emissivity of CeO2 coatings by La doping

Pure CeO2 and La doped CeO2 (LDC) coatings were prepared on nickel-based substrates by electron beam physical vapor deposition at 1173 K. The infrared emissivity in 2.5–25 μm of LDC coatings was enhanced with the increase of La concentration at high temperature 873–1273 K. Compared to the undoped CeO2 coating, the infrared emissivity of 16.7% LDC coating increases by 55%, and reaches up to 0.9 at 873 K. The enhancement of doped coatings’ emissivity is attributed to the increasing lattice absorption and free-carrier absorption. The high emissivity LDC coatings show a promising potential in high temperature application.