Title of article :
Stoichiometry dependence of the optical properties of amorphous-like InimageGaimageZn1−xO1+0.5x−δ thin films
Author/Authors :
A.C. Galca، نويسنده , , G. Socol، نويسنده , , L.M. Trinca، نويسنده , , V. Craciun، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
4
From page :
96
To page :
99
Abstract :
The paper investigates the dependence of the optical properties on cation concentration of amorphous-like indium gallium zinc oxide thin films (InimageGaimageZn1−xO1+0.5x−δ) with various (In + Ga)/(In + Ga + Zn) and Ga/(In + Ga) ratios obtained by pulsed laser deposition. X-ray reflectivity and spectroscopic ellipsometry thickness results were in good agreement. The proportionality between density and the refractive index in the transparency range is evidenced. The extracted physical parameters are clearly influenced by the variation of cation concentration.
Keywords :
Transparent conductive oxides , Amorphous oxide semiconductors , Thin films , Spectroscopic ellipsometry , X-ray reflectivity , Optical properties
Journal title :
Applied Surface Science
Serial Year :
2013
Journal title :
Applied Surface Science
Record number :
1007627
Link To Document :
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