• Title of article

    Stoichiometry dependence of the optical properties of amorphous-like InimageGaimageZn1−xO1+0.5x−δ thin films

  • Author/Authors

    A.C. Galca، نويسنده , , G. Socol، نويسنده , , L.M. Trinca، نويسنده , , V. Craciun، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2013
  • Pages
    4
  • From page
    96
  • To page
    99
  • Abstract
    The paper investigates the dependence of the optical properties on cation concentration of amorphous-like indium gallium zinc oxide thin films (InimageGaimageZn1−xO1+0.5x−δ) with various (In + Ga)/(In + Ga + Zn) and Ga/(In + Ga) ratios obtained by pulsed laser deposition. X-ray reflectivity and spectroscopic ellipsometry thickness results were in good agreement. The proportionality between density and the refractive index in the transparency range is evidenced. The extracted physical parameters are clearly influenced by the variation of cation concentration.
  • Keywords
    Transparent conductive oxides , Amorphous oxide semiconductors , Thin films , Spectroscopic ellipsometry , X-ray reflectivity , Optical properties
  • Journal title
    Applied Surface Science
  • Serial Year
    2013
  • Journal title
    Applied Surface Science
  • Record number

    1007627