Title of article :
Determination of non-uniform graphene thickness on SiC (0 0 0 1) by X-ray diffraction
Author/Authors :
A. Ruammaitree، نويسنده , , H. Nakahara، نويسنده , , K. Akimoto *، نويسنده , , K. Soda، نويسنده , , Y. Saito، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
5
From page :
297
To page :
301
Abstract :
Epitaxial graphene thickness distribution grown on Si-terminated SiC (0 0 0 1) surface was analyzed by using an X-ray diffraction (XRD) pattern and a simple equation. These results were confirmed by low accelerating voltage scanning electron microscopy and angle resolved photoemission spectroscopy. Despite its simplicity, proposed XRD analysis provides fairly accurate information on layer spacing and thickness distribution of graphene layers. It is expected that this method is useful for quick evaluation of graphene layer numbers on large scale substrate.
Keywords :
SiC , Epitaxial graphene , Angle-resolved photoemission spectroscopy , X-ray diffraction
Journal title :
Applied Surface Science
Serial Year :
2013
Journal title :
Applied Surface Science
Record number :
1007675
Link To Document :
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