Author/Authors :
Chong Wang، نويسنده , , Qianqian Hu، نويسنده , , Jiquan Huang، نويسنده , , Lan Wu، نويسنده , , Zhonghua Deng، نويسنده , , Zhuguang Liu، نويسنده , , Yang Liu، نويسنده , , Yongge Cao، نويسنده ,
Abstract :
N-doped TiO2 film was deposited by RF reactive magnetron sputtering in a mixture gas of N2, O2 and Ar. The experimental results show that the crystal structure is anatase phase, and the concentration of substitutional nitrogen is 4.91 at.% which leads to a narrow optical band gap of 2.65 eV. The H2 production rate of the N-doped TiO2 film is about 601 μmol g−1 h−1, far higher than that of the undoped TiO2 film and even about 50 times higher than that of dispersive P25 powder.
Keywords :
N-doped TiO2 film , Photocatalytic water splitting , RF magnetron sputtering , Hydrogen production