Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes

The influence of external tensile stress on blue InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) is demonstrated. It was found that applying external tensile stress effectively compensates for the compressive strain developed in the InGaN active layer, thus reducing the quantum-confined Stark effect by attenuating the piezoelectric polarization from the InGaN layer. With 35 A/cm2 of current density (∼50 mA), the light output power could be improved by ∼40% when the LEDs were subjected to an external tensile stress. The blueshift in electroluminescence (EL) spectra was reduced by applying the external tensile stress. In contrast, when the LEDs were exposed to external compressive stress, the light output power intensity was decreased by ∼12% at a current density of 35 A/cm2. The simulation results confirm that the relaxation of compressive strain in the InGaN/GaN MQW structure results in the reduction of the piezoelectric field and improves the overlap of electron and hole wave functions.