Title of article
Fabrication of SiGe rings and holes on Si(0 0 1) by flash annealing
Author/Authors
L. Persichetti، نويسنده , , A. Capasso، نويسنده , , A. Sgarlata، نويسنده , , A. Quatela، نويسنده , , S. Kaciulis، نويسنده , , A. Mezzi، نويسنده , , M. Notarianni، نويسنده , , N. Motta، نويسنده , , M. Fanfoni، نويسنده , , A. Balzarotti، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
7
From page
813
To page
819
Abstract
We show that SiGe islands are transformed into nanoholes and rings solely by annealing treatments and without Si capping. Rings are produced by a rapid flash heating at temperatures higher than the melting point of Ge, whereas nanoholes are produced by several minutes of annealing. The rings are markedly rich in Si with respect to the pristine islands, suggesting that the evolution path from islands to rings is driven by the selective dissolution of Ge occurring at high temperatures.
Keywords
Quantum dots , Heteroepitaxial growth , Nanorings , Nanoholes
Journal title
Applied Surface Science
Serial Year
2013
Journal title
Applied Surface Science
Record number
1007888
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