Surface modification of silicon with single ion irradiation

In order to solve the issues in Si nanoelectronics such as fluctuation in the device functions and poor reliability of devices due to relative increase in mass transport in nm size structures and to yield novel functions by rather taking advantage of the nm size, we need to understand the phenomena peculiar to nm size structures. Based on the fact that a practical method to fabricate nm structures in terms of throughput, process time, and cost is to combine modification of solid surfaces with energetic particles (especially with single ions) and subsequent chemical processing in solutions, we describe single ion irradiation effects as a tool to modify solid surfaces in nm scale, a method for nm scale in-situ observation of solid surfaces, and some examples of the acquired knowledge.