• Title of article

    Combinatorial synthesis and characterization of a ternary epitaxial film of Co and Mn doped Ge (0 0 1)

  • Author/Authors

    F. Tsui، نويسنده , , Ay e Ba Collins، نويسنده , , L. He، نويسنده , , A. Mellnik، نويسنده , , Y. Zhong، نويسنده , , S. Vogt، نويسنده , , Y.S. Chu، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    5
  • From page
    709
  • To page
    713
  • Abstract
    We report combinatorial molecular beam epitaxy synthesis and properties of a ternary epitaxial film of Co and Mn co-doped Ge grown on Ge (0 0 1) substrate. Structural effects were examined in situ by reflection high-energy electron diffraction and ex situ by microbeam X-ray diffraction techniques, and magnetic properties were probed by using magnetooptic Kerr effect. Ternary epitaxial phase diagrams have been studied for total doping concentrations up to 30 at.%, where regions of coherent epitaxy and rough disordered growth and those of near room temperature ferromagnetic ordering have been identified.
  • Keywords
    Epitaxial film , Magnetic semiconductor , Group IV semiconductor , Transition metal doping , Combinatorial thin film
  • Journal title
    Applied Surface Science
  • Serial Year
    2007
  • Journal title
    Applied Surface Science
  • Record number

    1008574