Quantitative analysis of thin-film conductivity by scanning microwave microscope

We propose a novel method for high-throughput quantitative analysis of thin-film conductivity σ by using a scanning microwave microscope (SμM). We demonstrated that composition spread thin films of Ti1–xNbxO2 can be utilized as a standard reference in a wide σ range. The shift in Q-value measured by SμM along the composition-spread axis showed a single peak, which moved to the lower x side with film thickness. This behavior was confirmed by electrical field simulation using the finite element method.