Title of article :
Role of vanadium content in ZnO thin films grown by pulsed laser deposition
Author/Authors :
M.E. Koleva، نويسنده , , P.A. Atanasov، نويسنده , , N.N. Nedialkov، نويسنده , , H. Fukuoka، نويسنده , , M. Obara، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
4
From page :
1228
To page :
1231
Abstract :
Vanadium-doped ZnO films (Zn1−xVxO, where x = 0.02, 0.03, 0.05 and 0.07), were formed from ceramic targets on c-cut sapphire substrates using pulsed laser deposition at substrate temperature of 600 °C and oxygen pressure of 10 Pa. In order to clarify how the vanadium concentration influences the films’ properties, structural and magnetic investigations were performed. All films crystallised in wurtzite phase and presented a c-axis preferred orientation at low concentrations of vanadium. The results implied that the doping concentration and crystalline microstructure influence strongly the systemʹs magnetic characteristics. Weak ferromagnetism was registered for the film with the lowest doping concentration (2 at.%), which exhibited a ferromagnetic behavior at Curie temperature higher than 300 K. Increasing the vanadium content in the film caused degradation of the magnetic ordering.
Keywords :
Diluted magnetic semiconductors , Thin films , Pulsed laser deposition
Journal title :
Applied Surface Science
Serial Year :
2007
Journal title :
Applied Surface Science
Record number :
1008678
Link To Document :
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