Author/Authors :
Da-Yong Jiang، نويسنده , , Jiying Zhang، نويسنده , , Ke-Wei Liu، نويسنده , , Chong-Xin Shan، نويسنده , , Yan-Min Zhao، نويسنده , , Tong Yang، نويسنده , , Bin Yao ، نويسنده , , You-Ming Lu، نويسنده , , Dezhen Shen، نويسنده ,
Abstract :
MgxZn1−xO alloy films were prepared on sapphire substrates using Ar and N2 as the sputtering gases. The effect of the sputtering gas on the structural, optical and electrical properties of the MgxZn1−xO films was studied. By using N2 as the sputtering gas, the MgxZn1−xO film shows p-type conductivity and the band gap is larger than that employing Ar as the sputtering gas. The reason for this phenomenon is thought to be related to the reaction between N–O or N–Zn, and the N-doping.
Keywords :
MgxZn1?xO , Band gap , Electrical properties , Raman
