Title of article
Modification of anode surface in organic light-emitting diodes by chalcogenes
Author/Authors
Marina A. Katkova، نويسنده , , Vasilii A. Ilichev، نويسنده , , Alexey N. Konev، نويسنده , , Maxim A. Batenkin، نويسنده , , Irina I. Pestova، نويسنده , , Alexey G. Vitukhnovsky، نويسنده , , Mikhail N. Bochkarev، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
2216
To page
2219
Abstract
Influence of thin chalcogen X (S, Se, Te) interlayer between anode (indium–tin oxide, ITO) and a layer of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD) used as a hole-transport layer (HTL) on the operating characteristics of organic light-emitting diodes (OLEDs) of composition ITO/X/TPD/Alq3/Yb (Alq3 – aluminum 8-quinolinolate) has been investigated. It was found that the sulphur layer decreases operating voltage and enhances operating stability of a device while the selenium or tellurium interlayers impair these characteristics.
Keywords
OLEDs , Sulphur , Tellurium , Selenium , ITO/TPD interface
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1008840
Link To Document