Title of article
Scanning tunneling microscopy investigations of silicon carbide nanowires
Author/Authors
A. Busiakiewicz، نويسنده , , Z. Klusek، نويسنده , , A. Huczko، نويسنده , , P.J. Kowalczyk، نويسنده , , P. D?browski، نويسنده , , J. W. Kozlowski، نويسنده , , S. Cudzi?o، نويسنده , , P.K. Datta، نويسنده , , W. Olejniczak، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
4268
To page
4272
Abstract
Scanning tunneling microscopy (STM) images have been obtained from the surfaces of silicon carbide nanowires produced in the thermolysis-induced carbonization of halocarbons (combustion synthesis). The morphology of the nanowires shows trench-like features perpendicular to the fibres’ axis, which is assigned to the existence of microfacets on their sidewalls. For the first time high-resolution STM images of the SiC nanowires are presented. The results are in agreement with the previous reports suggesting the presence of microfacets on the SiC whiskers’ surface.
Keywords
Silicon carbide , Nanowires , Scanning tunneling microscopy , Nanofibres
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009152
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