Title of article :
Scanning tunneling microscopy investigations of silicon carbide nanowires
Author/Authors :
A. Busiakiewicz، نويسنده , , Z. Klusek، نويسنده , , A. Huczko، نويسنده , , P.J. Kowalczyk، نويسنده , , P. D?browski، نويسنده , , J. W. Kozlowski، نويسنده , , S. Cudzi?o، نويسنده , , P.K. Datta، نويسنده , , W. Olejniczak، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
4268
To page :
4272
Abstract :
Scanning tunneling microscopy (STM) images have been obtained from the surfaces of silicon carbide nanowires produced in the thermolysis-induced carbonization of halocarbons (combustion synthesis). The morphology of the nanowires shows trench-like features perpendicular to the fibres’ axis, which is assigned to the existence of microfacets on their sidewalls. For the first time high-resolution STM images of the SiC nanowires are presented. The results are in agreement with the previous reports suggesting the presence of microfacets on the SiC whiskers’ surface.
Keywords :
Silicon carbide , Nanowires , Scanning tunneling microscopy , Nanofibres
Journal title :
Applied Surface Science
Serial Year :
2008
Journal title :
Applied Surface Science
Record number :
1009152
Link To Document :
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