Title of article
Utilization of TXRF analytical technique in order to improve front-end semiconductor processing
Author/Authors
Thanas Budri، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
6
From page
4768
To page
4773
Abstract
In this paper, we summarize how the introduction of in-line TXRF monitoring provides detailed analytical information on aluminum, titanium and molybdenum contamination levels in order to improve several process steps from front-end processing, minimize product yield loss and make it possible to successfully manufacture multiple products and process geometries in the same fabrication platform.
Keywords
Front-end or FEOL (processing of semiconductor wafers till metal layer1 in order to test the transistors performance via electrical testing) , Back-end or BEOL (additional processing where interconnect and insulators are added to complete circuitry prior to wafer dicing and packaging) , Pad etch window (window opening for contact via plasma etch) , TXRF , SIMS , TOF-SIMS , EMMI (emission spectroscopy , delamination overheating metallization layers material characterization technique) , contamination
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009233
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