Growth of magnetic materials and structures on Si(0 0 1) substrates using Co2Si as a template layer

We report in this paper the use of Co2Si silicide as a template layer for the integration of magnetic materials and structures on silicon substrate. By undertaking Co deposition on silicon at a temperature of about 300 °C, we show that it is possible to obtain a smooth and epitaxial Co2Si layer, which can act as a template layer preventing the reaction between Co and other transition metals with silicon. Two examples of over-growth of magnetic materials and structures on this template layer will be presented: growth of ferromagnetic Co layers and of magnetic tunnel junctions (Co(Fe)/AlOx/NiFe).