Effects of In and Sb mono-layers to form rotated InSb films on a Si(1 1 1) substrate

A new method for InSb heteroepitaxial growth on a Si substrate was introduced in our previous work, in which an InSb film was formed via an InSb bi-layer. In the present work, to study the effects of In and Sb individual layers on the InSb film quality, InSb was deposited onto an InSb bi-layer, In mono-layer, and Sb mono-layer on a Si substrate. It was found that both In and Sb layers (in other words, InSb bi-layer) were essential to form a fine InSb film.