Current topics of silicon germanium devices

Silicon germanium (SiGe) is lattice mismatched to silicon by up to 4% depending on its Ge content. Basic investigations on strained layer growth, interface properties and deviation from equilibrium are done with SiGe/Si heterostructures. Early results are discussed in context with our recent understanding. The main focus of this overview is devoted to the micro- and optoelectronic devices which could be fabricated after solving or understanding the basic interface problems. This includes devices already in production, and those in emerging fields for inclusion in the next generation of integrated circuits, and a selection of device concepts with high merits to be proven in experiment.