Author/Authors :
Yoshihisa Yamamoto، نويسنده , , Hideaki Togashi، نويسنده , , Atsushi Kato، نويسنده , , Yuya Takahashi، نويسنده , , Atsushi Konno and Masaru Uchiyama ، نويسنده , , Yuden Teraoka*، نويسنده , , Akitaka Yoshigoe، نويسنده , , Hidehito Asaoka، نويسنده , , Maki Suemitsu، نويسنده ,
Abstract :
Initial adsorption of oxygen molecules on the Si(1 1 0)-16 × 2 surface and subsequent modification of the bonding states induced by mild (300 °C) annealing have been studied by synchrotron-radiation photoemission spectroscopy and scanning-tunneling microscopy. It has been shown that upon annealing, the intensity and the energy positions of the Si 2p suboxide components shift towards the values characteristic for the thermal oxide. This indicates the presence of a metastable chemisorption state of oxygen on the Si(1 1 0)-16 × 2 surface.
Keywords :
Si(1 1 0) surface , Dry oxidation , Adsorbate structure , thermal stability
