“Temperature oscillation” as a real-time monitoring of the growth of 3C–SiC on Si substrate

Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C–SiC on Si substrate using monomethyl silane. The period of the “temperature oscillation” is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C–SiC film on Si substrates.