Title of article :
Wet chemical etching method for BST thin films annealed at high temperature
Author/Authors :
R.T. Zhang، نويسنده , , C.R. Yang، نويسنده , , A. Yu، نويسنده , , B. Wang، نويسنده , , H.J. Tang، نويسنده , , H.W. Chen، نويسنده , , J.H. Zhang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
4
From page :
6697
To page :
6700
Abstract :
As a traditional etchant, pure buffered hydrofluoric acid (BHF), does not possess the ability to etch BST thin films annealed at high temperature, even though it works greatly on as-deposited Ba0.5Sr0.5TiO3 (BST) films. In this paper, we developed an etchant by mixing BHF and strong acid (HNO3, HCl, H2SO4 and H3PO4) and use it successfully on BST films annealed with high temperature. The experimental results show that a 1–8 wt% of strong acid acts as an efficient catalyst and the etching speed is significantly improved. The etched BST films show little distortions and smooth etching edges were recorded.
Keywords :
RF magnetron sputtering , Wet chemical etching , Annealing temperature
Journal title :
Applied Surface Science
Serial Year :
2008
Journal title :
Applied Surface Science
Record number :
1009580
Link To Document :
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