Author/Authors :
T. Wang، نويسنده , , X.J. Pan، نويسنده , , By X.M. WANG، نويسنده , , H.G. Duan، نويسنده , , R.S. Li، نويسنده , , H. Li، نويسنده , , E.Q. Xie *، نويسنده ,
Abstract :
Copper nitride (Cu3N) thin film was deposited on silicon (Si) substrate by reactive magnetron sputtering method. X-ray diffraction measurement showed that the film was composed of Cu3N crystallites with anti-ReO3 structure and exhibited preferential orientation of [1 0 0] direction. The field emission (FE) result showed that Cu3N film had a turn-on electric field of about 3 V/μm at a current density of 1 μA/cm2 and a current density of 700 μA/cm2 was obtained at the electric field of 24 V/μm. The emission mechanism inferred by Fowler-Nordheim (FN) plot is shown as following: thermal electron emission at low field region and tunneling electron emission at high field region.
Keywords :
Thin films , X-ray diffraction , Electronic transport , Semiconductors
