Title of article
Field emission property of copper nitride thin film deposited by reactive magnetron sputtering
Author/Authors
T. Wang، نويسنده , , X.J. Pan، نويسنده , , By X.M. WANG، نويسنده , , H.G. Duan، نويسنده , , R.S. Li، نويسنده , , H. Li، نويسنده , , E.Q. Xie *، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
3
From page
6817
To page
6819
Abstract
Copper nitride (Cu3N) thin film was deposited on silicon (Si) substrate by reactive magnetron sputtering method. X-ray diffraction measurement showed that the film was composed of Cu3N crystallites with anti-ReO3 structure and exhibited preferential orientation of [1 0 0] direction. The field emission (FE) result showed that Cu3N film had a turn-on electric field of about 3 V/μm at a current density of 1 μA/cm2 and a current density of 700 μA/cm2 was obtained at the electric field of 24 V/μm. The emission mechanism inferred by Fowler-Nordheim (FN) plot is shown as following: thermal electron emission at low field region and tunneling electron emission at high field region.
Keywords
Thin films , X-ray diffraction , Electronic transport , Semiconductors
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009601
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