Title of article
Phase transformation in BN films by nitrogen-protected annealing at atmospheric pressure
Author/Authors
Xiaokang Zhang، نويسنده , , Jinxiang Deng، نويسنده , , Ling Wang، نويسنده , , Xuyang Wang، نويسنده , , Qian Yao، نويسنده , , Guanghua Chen، نويسنده , , Deyan He، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
7109
To page
7113
Abstract
Two groups of RF-sputtered BN films (pure hexagonal phase and approximately 27.5% cubic content, respectively) were annealed at 600 to 1000 °C under nitrogen at atmospheric pressure after deposition. FTIR spectroscopy indicates a reversible transformation from hexagonal phase to cubic phase, and again hexagonal phase. The most effective temperature for h-BN converting to cubic zincblende (c-BN) is 900 °C. Further, the indirectly stepwise transformation from hexagonal (h-BN) to explosive BN (E-BN) and then to c-BN employing metastable E-BN as an intermedium was observed. In addition, we tentatively put forward that the existence of defective h-BN and the N defects plays a key role on h-BN to c-BN transformation.
Keywords
Annealing , FTIR , Boron nitride films , Phase transformation
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009662
Link To Document