Author/Authors :
S. Ben Bouzid، نويسنده , , W. Zaghdoudi، نويسنده , , A. Hamdouni، نويسنده , , N. Ben Sedrine، نويسنده , , F. Bousbih، نويسنده , , J.C. Harmand، نويسنده , , R. Chtourou، نويسنده ,
Abstract :
We study the effect of the GaAsN narrow QWs on the optical properties of the GaInNAsSb/GaAs QWs using photoluminescence spectroscopy. A drastic effect of the N-rich layers on the QW photoluminesecnec (PL) intensity was observed with a strong influence of the spacer thickness. In the PL spectra a broad band caused by excitonic transitions related with N-related clusters in GaAs barriers is found. Based on calculations from experimental data, we have identified the low QW peak energy to the E1–H1 transition using the shear deformation potentials report Δp/p = 0.24.
Keywords :
Semiconductor saturable absorber , GaInNAsSb , GaAsN , Molecular beam epitaxy
