Author/Authors :
Woong Lee، نويسنده , , Siyoung Kim Seung-Ki Sul Lipo، نويسنده , , Joonsuk Song، نويسنده , , Hangju Ko، نويسنده , , Takafumi Yao، نويسنده , , Young-Rae Cho، نويسنده , , Hongchan Lee، نويسنده , , Sangtae Lee، نويسنده , , Bonheun Koo، نويسنده , , Jiho Chang، نويسنده ,
Abstract :
We have studied the molecular beam epitaxy (MBE) of GaSb films on GaAs (0 0 1) substrates by using ZnTe as a new buffer layer. GaSb films were grown on two distinct ZnTe surfaces and the influence of surface chemical composition of ZnTe on the morphological and structural properties of GaSb films has been investigated. Initial 2-dimensional (2D) growth of GaSb films is obtained on Zn-terminated surface consequently smooth morphology and high crystal quality GaSb films are achieved. The thin GaSb film (0.4 μm) grown on Zn-terminated ZnTe surface reveals considerably narrow X-ray diffraction linewidth (113 arcsec) along with small residual strain, which strongly supports the availability of ZnTe buffer for the growth of high-quality GaSb film.
Keywords :
Semiconducting III–V , Single crystal growth , X-ray diffraction , Molecular beam epitaxy , Antimonides
