Title of article :
Quasi-one-dimensional In atomic chains on Si(1 1 1) at low temperature studied by reflection high-energy positron diffraction and scanning tunneling microscopy
Author/Authors :
M. Hashimoto، نويسنده , , Y. Fukaya، نويسنده , , A. Kawasuso، نويسنده , , A. Ichimiya، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Abstract :
We have investigated a quasi-one-dimensional structure of Si(1 1 1)-8 × 2-In surface using reflection high-energy positron diffraction (RHEPD) and scanning tunneling microscopy (STM). From the RHEPD rocking curve analyses, we confirmed the formation of the In hexagon structure proposed by González et al. [C. González, F. Flores, J. Ortega, Phys. Rev. Lett. 96 (2006) 136101]. Furthermore, we found that the empty-state STM image at 44 K is consistent with that calculated with the optimum hexagon structure by the RHEPD analyses.
Keywords :
Indium , Surface structure , Reflection high-energy positron diffraction (RHEPD) , Silicon , Scanning tunneling microscopy (STM)
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science