Roughness development in the depth profiling with 500 eV O2+ beam with the combination of oxygen flooding and sample rotation

Roughness development is one of the most often addressed issues in the secondary ion mass spectrometry (SIMS) ultra-shallow depth profiling. The effect of oxygen flooding pressure on the roughness development has been investigated under the bombardment of 500 eV O2+ beam with simultaneous sample rotation. Oxygen flooding had two competing effects on the surface roughening, i.e., enhancement of initiating roughening and suppression of roughening development, which were suggested to be described by the onset depth zon and transient width wtr of surface roughening. Both zon and wtr decreased as oxygen flooding pressure increased. As the result, surface roughening was most pronounced at the intermediate pressure from 4.4E−5 Pa to 5.8E−5 Pa. The surface roughening is negligible while without flooding or with flooding at the saturated pressure. No flooding is preferable for depth profiling ultra-shallow B implantation because of the better B profile shape and short analysis time.