Author/Authors :
P. Brabant، نويسنده , , John J. Ferrara، نويسنده , , B. Pagliaro، نويسنده , , K. Weeks، نويسنده , , M. Rittgers، نويسنده , , R. Scott، نويسنده , , Y. Zhang، نويسنده , , T. Landin، نويسنده , , T. Irving، نويسنده , , Stephanie J. Spear، نويسنده , , J. Italiano، نويسنده , , David S.G. Thomas ، نويسنده ,
Abstract :
We investigated the oxidation of hydrogen terminated Si (1 0 0) surfaces stored in Fab air environment. Hydrogen termination for extended queue times with wet and dry clean techniques is investigated. Comparison of X-ray photoelectron spectroscopy (XPS) data and empirical results from Si capping layer are used to determine re-oxidation of the Si surface over extended queue times.
H2 pre-bake efficiency with the best clean method, 100:1 HF, in situ rinsed with degasified DI water was tested. 2 min 850 °C and 900 °C H2 bakes, at 10 Torr pressure, both resulted in atomically clean surfaces below SIMS detectable for up to 96 h queue time in lab ambient (controlled 35–40% relative humidity and temperature range of 22–25 °C).
