Title of article
Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface
Author/Authors
U. Seidel، نويسنده , , B.E. Sa?ol، نويسنده , , C. Pettenkofer، نويسنده , , T. Hannappel، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
3
From page
722
To page
724
Abstract
In this paper, the InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface was studied in detail, which turned out to be the most suitable to develop an InGaAs/GaAsSb interface that is as sharp as possible. In ultra high vacuum the InGaAs surface was investigated with low-energy electron diffraction, scanning tunneling microscopy and UV photoelectron spectroscopy employing synchrotron radiation as light source. Scanning the Γ−Δ−X direction by varying the photon energy between 8.5 eV and 50 eV, two surface states in the photoelectron spectra were observed in addition to the valence band peaks.
Keywords
III–V semiconductors , Surface state , Surface reconstruction , Photoelectron spectroscopy , InGaAs
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1010343
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