Molecular depth profiling of trehalose using a C60 cluster ion beam

Molecular depth profiling of organic overlayers was performed using a mass selected fullerene ion beam in conjunction with time-of-flight (TOF-SIMS) mass spectrometry. The characteristics of depth profiles acquired on a 300-nm trehalose film on Si were studied as a function of the impact kinetic energy and charge state of the C60 projectile ions. We find that the achieved depth resolution depends only weakly upon energy.