Author/Authors :
Andrei Rotaru، نويسنده , , Anna Mietlarek-Kropid?owska، نويسنده , , Catalin Constantinescu، نويسنده , , Nicu Sc?ri?oreanu، نويسنده , , Marius Dumitru، نويسنده , , Michal Strankowski، نويسنده , , Petre Rotaru، نويسنده , , Valentin Ion، نويسنده , , Cristina Vasiliu، نويسنده , , Barbara Becker-Cantarino، نويسنده , , Maria Dinescu، نويسنده ,
Abstract :
Thin films of [Cd{SSi(O–But)3}(S2CNEt2)]2, precursor for semiconducting CdS layers, were deposited on silicon substrates by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Structural analysis of the obtained films by Fourier transform infrared spectroscopy (FTIR) confirmed the viability of the procedure. After the deposition of the coordination complex, the layers are manufactured by appropriate thermal treatment of the system (thin film and substrate), according to the thermal analysis of the compound. Surface morphology of the thin films was investigated by atomic force microscopy (AFM) and spectroscopic-ellipsometry (SE) measurements.
Keywords :
Cadmium(II) coordination compound , Maple , Spectroscopic-ellipsometry , Thermal treatment , Precursor for CdS layers
