Growth temperature dependences of InN films grown by MOCVD

We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the ω scan’s full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 °C to 560 °C, room-temperature Hall mobility increased from 98 cm2/V s to nearly 800 cm2/V s and carrier concentration dropped from 5.29 × 1019 cm−3 to 0.93 × 1019 cm−3. The higher growth temperature resulted in more efficient cracking of NH3, which improved Hall mobility and decreased carrier concentration.